The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Oct. 29, 2018
Applicant:

Nikkiso Co., Ltd, Tokyo, JP;

Inventors:

Haruhito Sakai, Ishikawa, JP;

Noritaka Niwa, Ishikawa, JP;

Tetsuhiko Inazu, Ishikawa, JP;

Cyril Pernot, Ishikawa, JP;

Assignee:

NIKKISO CO., LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/14 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01);
Abstract

A deep ultraviolet light emitting device includes: a light extraction surface; an n-type semiconductor layer provided on the light extraction surface; an active layer having a band gap of 3.4 eV or larger; and a p-type semiconductor layer provided on the active layer. Deep ultraviolet light emitted by the active layer is output outside from the light extraction surface. A side surface of the active layer is inclined with respect to an interface between the n-type semiconductor layer and the active layer, and an angle of inclination of the side surface is not less than 15° and not more than 50°.


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