The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Apr. 30, 2020
Applicant:

Facebook Technologies, Llc, Menlo Park, CA (US);

Inventors:

Stephan Lutgen, Dresden, DE;

Thomas Lauermann, Cork, IE;

Assignee:

FACEBOOK TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); G02B 27/01 (2006.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 33/025 (2013.01); G02B 27/0172 (2013.01); H01L 27/156 (2013.01); H01L 33/0062 (2013.01); H01L 33/32 (2013.01); H01L 33/502 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); G02B 2027/0116 (2013.01); G02B 2027/0178 (2013.01);
Abstract

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. A plurality of mesa shapes are formed within the n-side semiconductor layer, the active light emitting layer, and the p-side semiconductor layer. The semiconductor layer stack comprises a III-V semiconductor material. The device also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, and a run-out between the first contacts and the second contacts is less than 200 nm.


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