The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Dec. 27, 2018
Applicant:

Petalux Inc., Seongnam-si, KR;

Inventors:

Seok Nam Ko, Yongin-si, KR;

Do Yeol Ahn, Seoul, KR;

Seung Hyun Yang, Yongin-si, KR;

Assignee:

PETALUX INC., Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/30 (2010.01); H01L 33/40 (2010.01); H01L 33/32 (2010.01); H01L 33/28 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 33/005 (2013.01); H01L 33/007 (2013.01); H01L 33/0083 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/28 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/40 (2013.01);
Abstract

A method of manufacturing an electronic device according to the present invention, comprises: preparing a substrate; forming an n-type semiconductor including a III-V compound semiconductor or a II-VI compound semiconductor material on the substrate; forming a metal thin film including at least one of copper (Cu), silver (Ag), gold (Au), titanium (Ti), and nickel (Ni) on the n-type semiconductor; and forming a p-type semiconductor on the n-type semiconductor by iodinizing the metal thin film using any one of liquid iodine (I), solid iodine (I), and gas iodine (I). Therefore, it is possible to overcome the limitation of the light emission efficiency of the p-type semiconductor by providing a hybrid type electronic device and a manufacturing method.


Find Patent Forward Citations

Loading…