The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Oct. 08, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Tayfun Gokmen, Briarcliff Manor, NY (US);
Oki Gunawan, Fair Lawn, NJ (US);
Richard A. Haight, Mahopac, NY (US);
Jeehwan Kim, Cambridge, MA (US);
David B. Mitzi, Mohapac, NY (US);
Mark T. Winkler, New York, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/075 (2012.01); H01L 31/032 (2006.01); H01L 31/0328 (2006.01); H01L 31/077 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/075 (2013.01); H01L 31/0322 (2013.01); H01L 31/0324 (2013.01); H01L 31/0326 (2013.01); H01L 31/0328 (2013.01); H01L 31/077 (2013.01); H01L 31/18 (2013.01); Y02E 10/541 (2013.01);
Abstract
A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.