The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
May. 11, 2020
Canon Kabushiki Kaisha, Tokyo, JP;
Toshihiro Shoyama, Kawasaki, JP;
Hiroshi Takakusagi, Atsugi, JP;
Yasuo Yamazaki, Saitama, JP;
Hideaki Ishino, Fujisawa, JP;
Toshiyuki Ogawa, Abiko, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×10atoms/cmand not greater than 4×10atoms/cm, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×10atoms/cmand not greater than 4×10atoms/cm; and forming a photoelectric conversion element in the second semiconductor region after the annealing.