The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Jan. 14, 2021
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventors:
Masatoshi Aketa, Kyoto, JP;
Yuta Yokotsuji, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 23/535 (2006.01); H01L 29/36 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 23/535 (2013.01); H01L 29/06 (2013.01); H01L 29/0607 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0634 (2013.01); H01L 29/0692 (2013.01); H01L 29/08 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 29/66143 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H01L 29/8725 (2013.01);
Abstract
The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vof 0.3 V to 0.7 V and a leakage current Jof 1×10A/cmto 1×10A/cmin a rated voltage V.