The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Aug. 17, 2018
Applicants:
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Yingbin Hu, Beijing, CN;
Ce Zhao, Beijing, CN;
Dongfang Wang, Beijing, CN;
Bin Zhou, Beijing, CN;
Jun Liu, Beijing, CN;
Yuankui Ding, Beijing, CN;
Wei Li, Beijing, CN;
Assignees:
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); G02F 1/1368 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 29/66765 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78669 (2013.01); H01L 29/78678 (2013.01); G02F 1/1368 (2013.01); H01L 27/3262 (2013.01);
Abstract
A thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a conductive region and the conductive region is between the source electrode and the drain electrode and is spaced apart from at least one of the source electrode and the drain electrode.