logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11355625 B1

PDFFull Text
Date of Patent:
Jun. 07, 2022

Filed:

Jul. 23, 2020

Device and semiconductor structure for improving the disadvantages of p-gan gate high electron mobility transistor

Applicants:

Delta Electronics, Inc., Taoyuan, TW;

National Central University, Jhongli, TW;

Inventors:

Chun-Chieh Yang, Taoyuan, TW;

Yue-Ming Hsin, Jhongli, TW;

Yi-Nan Zhong, Jhongli, TW;

Yu-Chen Lai, Jhongli, TW;

Assignees:

DELTA ELECTRONICS, INC., Taoyuan, TW;

NATIONAL CENTRAL UNIVERSITY, Jhongli, TW;

Attorney:

Muncy, Geissler, Olds & Lowe, PC

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Valerie N Newton

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 27/088 (2013.01); H01L 29/205 (2013.01);
Abstract

A device includes a first transistor and a second transistor. The first transistor includes a first gate terminal coupled to the first source terminal, a first source terminal, and a first drain terminal. The second transistor includes a second gate terminal coupled to the first drain terminal, a second source terminal, and a second drain terminal.

Find Patent Forward Citations

Quick Actions:

Yang, Chun-Chieh. (2022). Device and semiconductor structure for improving the disadvantages of p-gan gate high electron mobility transistor (U.S. Patent No. 11355625). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11355625

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…