The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Oct. 17, 2018
Applicants:
Hefei Boe Display Technology Co., Ltd., Hefei, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Assignees:
HEFEI BOE DISPLAY TECHNOLOGY CO., LTD., Hefei, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4908 (2013.01); H01L 21/0234 (2013.01); H01L 21/02178 (2013.01); H01L 27/1214 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66765 (2013.01);
Abstract
The present disclosure provides a thin film transistor, a method for preparing the same, a display substrate, and a display device. The thin film transistor includes a gate electrode, a semiconductor layer, and a gate insulation layer arranged between the gate electrode and the semiconductor layer, and the gate insulation layer includes a metal oxide layer and a modified layer formed through self-assembling on a side of the metal oxide layer away from the gate electrode and.