The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Jul. 26, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Soo Kyung Kwon, Suwon-si, KR;

Yongwook Kim, Yongin-si, KR;

Eun Joo Jang, Suwon-si, KR;

Jihyun Min, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); C09K 11/02 (2006.01); C09K 11/70 (2006.01); H01L 33/18 (2010.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 29/0665 (2013.01); C09K 11/02 (2013.01); C09K 11/70 (2013.01); H01L 33/18 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01);
Abstract

A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.


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