The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Aug. 06, 2020
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Thierry Coffi Herve Yao, Portland, OR (US);
Richard De Souza, Happy Valley, OR (US);
Troy Darwin Clear, Boring, OR (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/0415 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 51/0011 (2013.01);
Abstract
A method for fabricating a MOSFET includes forming a source region and a drain region on a surface of a semiconductor substrate, forming a gate region, forming a body diffusion region, forming metal structures, and forming a drift region including an n-type drift structure having a stepped dopant concentration profile with dopant concentrations increasing along a lateral direction from the drain region to the source region of the device.