The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Nov. 20, 2019
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;

Inventors:

Zhenguo Lin, Shenzhen, CN;

Xingyu Zhou, Shenzhen, CN;

Yuanjun Hsu, Shenzhen, CN;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/32 (2006.01); H01L 51/56 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3265 (2013.01); H01L 27/3246 (2013.01); H01L 27/3262 (2013.01); H01L 27/3272 (2013.01); H01L 51/56 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 2227/323 (2013.01);
Abstract

The present disclosure provides an OLED display panel which includes a substrate, a drive circuit layer, a light-emitting functional layer, and a pixel definition layer. The light-emitting functional layer includes a light-emitting area and a non-light-emitting area. The drive circuit layer includes a buffer layer, a first electrode plate, and a second electrode plate, and the first electrode plate and the second electrode plate form a storage capacitor. It solves the technical problem of current OLED display panels having dark stripes by not depositing the first electrode plate when silicon nitride is deposited to form a first buffer layer which prevents ionic gases produced when silicon nitride is deposited from having a reduction reaction with the first electrode plate.


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