The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Aug. 24, 2020
AU Optronics Corporation, Hsinchu, TW;
Chen-Shuo Huang, Hsinchu, TW;
Hung-Wei Li, Hsinchu, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
An active device substrate includes a substrate, a silicon layer, a first insulating layer, a first gate, a first dielectric layer, a first transfer electrode, a second transfer electrode, and a second dielectric layer. Two openings penetrate through the first dielectric layer and overlap the silicon layer. The first transfer electrode and the second transfer electrode are respectively located in the two openings. The second dielectric layer is located on the first transfer electrode and the second transfer electrode. Two first through-holes penetrate through the second dielectric layer. The first transfer electrode and the second transfer electrode are etch stop layers of the two first through-holes.