The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Jul. 23, 2019
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Naoki Saka, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/374 (2011.01); H01L 27/146 (2006.01); H04N 5/3745 (2011.01); H04N 5/378 (2011.01); H04N 5/357 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01); H04N 5/37457 (2013.01); H04N 5/3575 (2013.01);
Abstract

The present technology relates to a solid-state imaging apparatus and electronic equipment capable of coping with fluctuations in characteristics depending on the direction of current flow. There is provided a solid-state imaging apparatus including: a pixel array unit that includes pixels having a photoelectric conversion unit and arranged in a two-dimensional form, in which a transistor of the pixel has a structure in which an amount of overlap to an underside of a gate by a source-side LDD region differs from an amount of overlap to the underside of the gate by a drain-side LDD region, and a junction depth of the source-side LDD region differs from a junction depth of the drain-side LDD region. The present technology may be applied, for example, to a CMOS image sensor.


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