The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Aug. 23, 2019
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;

Inventors:

Chunhsiung Fang, Shenzhen, CN;

Yuanchun Wu, Shenzhen, CN;

Poyen Lu, Shenzhen, CN;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 27/12 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); G02F 1/1368 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 27/127 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 29/401 (2013.01); H01L 29/4908 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78675 (2013.01); G02F 1/1368 (2013.01); G02F 2202/104 (2013.01); H01L 27/3262 (2013.01);
Abstract

The present disclosure provides an array substrate, a manufacturing method of the array substrate, and a display device. The array substrate includes a hydrogen ion film formed between an active layer and a source/drain electrode of a low temperature poly-silicon thin film transistor, and a hole is formed in a region of the hydrogen ion film where a metal-oxide-semiconductor thin film transistor is disposed. Based on the hydrogen ion film, the electrical performance and stability of the low temperature poly-silicon thin film transistor are improved. Furthermore, hydrogen elements are not diffused to the region where the metal-oxide-semiconductor thin film transistor is disposed.


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