The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Jul. 18, 2019
Applicant:

Tcl China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;

Inventors:

Wei Zhang, Shenzhen, CN;

Macai Lu, Shenzhen, CN;

Minggang Liu, Shenzhen, CN;

Chunche Hsu, Shenzhe, CN;

Chiayu Lee, Shenzhen, CN;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 27/1214 (2013.01); H01L 29/78633 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01);
Abstract

The present disclosure provides a micro light emitting diode display panel, a method for fabricating the same, and a display device comprising the same. The micro light emitting diode display panel includes an active layer, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, a pixel electrode, a micro light emitting diode, and a gate insulating layer covering the active layer, the gate insulating layer, the gate electrode, the source electrode, and the drain electrode. The light shielding layer blocks light emitted by the micro light emitting diode from being incident on the thin film transistor, thereby reducing influence of the light emitted by the micro light emitting diode light on the thin film transistor.


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