The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Feb. 04, 2019
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Kazushiro Nomura, Yokohama Kanagawa, JP;

Mie Matsuo, Kamakura Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/532 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5386 (2013.01); H01L 23/5385 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 27/14636 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a first substrate including a first insulating layer, a first conductive layer provided in the first insulating layer, a first metal layer provided in the first insulating layer, and a second metal layer provided between the first metal layer and the first conductive layer, a linear expansion coefficient of the second metal layer being higher than that of the first metal layer; and a second substrate including a second insulating layer, and a third metal layer provided in the second insulating layer, in contact with the first metal layer. The second substrate contacts with the first substrate.


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