The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Jan. 19, 2021
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Fanqi Wu, Milpitas, CA (US);

Huai-Yuan Tseng, San Ramon, CA (US);

Sarath Puthenthermadam, San Jose, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01); G11C 16/26 (2006.01); H01L 27/11519 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/3445 (2013.01); G11C 16/26 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method of performing an erase operation on non-volatile storage is disclosed. The method comprises: applying, in a first erase loop of a plurality of erase loops of the erase operation, a first erase voltage pulse to a set of non-volatile storage elements; determining an upper tail of a threshold voltage distribution of the set of non-volatile storage elements after applying the first erase voltage pulse; determining a second erase voltage pulse based on the upper tail of the threshold voltage distribution of the set of non-volatile storage elements; and applying, in a second erase loop of the plurality of erase loops, the second erase voltage pulse to the set of non-volatile storage elements.


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