The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Jul. 20, 2021
China Flash Co., Ltd., Shanghai, CN;
Hong Nie, Shanghai, CN;
Jingwei Chen, Shanghai, CN;
CHINA FLASH CO., LTD., Shanghai, CN;
Abstract
The present disclosure relates to a method for programming a NAND flash memory, which includes: providing a NAND flash memory array, and initializing a to-be-programmed memory cell; applying a drain voltage to the drain of the to-be-programmed memory cell, and floating the source of the to-be-programmed memory cell; and applying a programming voltage to the gate of the to-be-programmed memory cell, and discharging the voltage at each end of the to-be-programmed memory cell after maintaining the voltage for a first time period, to complete programming; a difference between the voltage applied to the drain and the voltage applied to the substrate of the to-be-programmed memory cell being not less than 4 V, the first time period being not longer than 100 μs, and the programming voltage being not higher than 10 V.