The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Dec. 17, 2019
Applicant:
Nichia Corporation, Anan, JP;
Inventor:
Shuji Shioji, Komatsushima, JP;
Assignee:
NICHIA CORPORATION, Anan, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/40 (2010.01); C09K 11/62 (2006.01); H01L 33/48 (2010.01); H01L 33/50 (2010.01); H01L 33/38 (2010.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); C09K 11/621 (2013.01); H01L 33/405 (2013.01); H01L 33/486 (2013.01); H01L 33/502 (2013.01); H01L 33/507 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H01L 33/382 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0083 (2013.01); Y10S 977/774 (2013.01); Y10S 977/813 (2013.01); Y10S 977/892 (2013.01); Y10S 977/95 (2013.01);
Abstract
A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.