The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Sep. 16, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tomoki Ishimaru, Yokkaichi, JP;

Shinji Mori, Nagoya, JP;

Kazuhiro Matsuo, Kuwana, JP;

Keiichi Sawa, Yokkaichi, JP;

Akifumi Gawase, Kuwana, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/108 (2006.01); H01L 29/267 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/1082 (2013.01); H01L 27/10814 (2013.01); H01L 27/10855 (2013.01); H01L 27/10858 (2013.01); H01L 27/10873 (2013.01); H01L 29/0847 (2013.01); H01L 29/267 (2013.01); H01L 29/401 (2013.01); H01L 29/41775 (2013.01);
Abstract

A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.


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