The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
May. 21, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device that includes transistor and diode regions in one semiconductor substrate achieves favorable tolerance during recovery behaviors of diodes. A semiconductor base includes an n-type drift layer in the IGBT and diode regions. In the IGBT region, the semiconductor base includes a p-type base layer formed on the n-type drift layer, a p-type diffusion layer and an n-type emitter layer formed selectively on the p-type base layer, the diffusion layer having a higher p-type impurity concentration than the p-type base layer, and gate electrodes facing the p-type base layer via a gate insulating film. In the diode region, the semiconductor base includes a p-type anode layer formed on the n-type drift layer. The p-type diffusion layer has a higher p-type impurity concentration than the p-type anode layer, and has a smaller depth and a lower p-type impurity concentration as approaching the diode region.