The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Jun. 23, 2020
Amazing Microelectronic Corp., New Taipei, TW;
Chih-Wei Chen, Taoyuan, TW;
Kun-Hsien Lin, Hsinchu, TW;
Amazing Microelectronic Corp., New Taipei, TW;
Abstract
A bidirectional electrostatic discharge protection device and a method for fabricating the same is disclosed. The protection device includes a heavily-doped semiconductor substrate, a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, a heavily-doped area, and a lightly-doped area. The substrate, the heavily-doped area, and the lightly-doped area have a first conductivity type and the epitaxial layers have a second conductivity type. The first semiconductor epitaxial layer and the second semiconductor epitaxial layer are sequentially formed on the substrate, and the heavily-doped area and the lightly-doped area are formed in the second semiconductor epitaxial layer. The lightly-doped area covers the corner of the heavily-doped area, and the breakdown voltage of a junction between the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer corresponds to the breakdown voltage of a junction between the second semiconductor epitaxial layer and the heavily-doped area.