The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
May. 14, 2020
Applicant:
Cambridge Electronics, Inc., Belmont, MA (US);
Inventor:
Bin Lu, Watertown, MA (US);
Assignee:
Cambridge Electronics, Inc., Belmont, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 21/108 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/0254 (2013.01); H01L 21/108 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/66484 (2013.01); H01L 29/7786 (2013.01); H01L 29/7813 (2013.01); H01L 29/7831 (2013.01);
Abstract
A new transistor structure is disclosed. This new structure has a dielectric stress layer in a three-dimensional structure outside of the gate region for modulation or the characteristics of the transistor. Additionally, trenches are created in the region between the source electrode and the drain electrode in such a manner so as to create ridges that traverse the gate region.