The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Apr. 05, 2021
Applicant:

United States of America As Respresented BY the Secretary of the Navy, San Diego, CA (US);

Inventors:

Cody K. Hayashi, Waipahu, HI (US);

Richard C. Ordonez, Miliani, HI (US);

David G. Garmire, Ann Arbor, MI (US);

Lewis Hsu, Honolulu, HI (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01G 7/06 (2006.01); H01G 4/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01G 4/04 (2013.01); H01G 7/06 (2013.01); H01L 29/1606 (2013.01);
Abstract

A method for using a graphene field-effect transistor (GFET) as a reconfigurable circuit, the method comprising the following steps: depositing a liquid dielectric over a graphene channel of the GFET; applying an activation energy via a first electric field across the liquid dielectric and the graphene channel to electrochemically produce chemical species within the liquid dielectric such that the chemical species accumulate at, and molecularly bond with, the graphene channel thereby decreasing a conductivity of the graphene channel; and applying a deactivation energy via a second electric field of opposite polarity to the first electric field to remove interaction between the chemical species and the graphene channel to increase the conductivity of the graphene channel.


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