The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Oct. 28, 2019
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Jungjune Kim, Seoul, KR;

Youngjin Yi, Seoul, KR;

Younghun Han, Bucheon-si, KR;

Youngyoung Chang, Goyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); H01L 27/146 (2006.01); G01T 1/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14658 (2013.01); G01T 1/20183 (2020.05); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01);
Abstract

The present disclosure relates to a digital X-ray detector and a thin-film transistor array substrate for the same. Disclosed is a thin-film transistor array substrate for a digital X-ray detector in which deterioration of electrical characteristics of a thin-film transistors made of an oxide semiconductor may be reduced or minimized and aging of a PIN diode caused by external moisture may be reduced or minimized. Further, disclosed is a digital X-ray detector including the array substrate. To this end, the array substrate includes a second protective layer having a variety of patterns so as to cover at least a portion of the PIN diode but not to cover the thin-film transistor. The second protective layer includes SiN. Thus, a de-hydrogenation path from the thin-film transistor may be secured and an external moisture barrier effect for the PIN diode may be achieved.


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