The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Apr. 21, 2020
Applicants:
Imec Vzw, Leuven, BE;
Universiteit Hasselt, Hasselt, BE;
Inventors:
Assignees:
IMEC VZW, Leuven, BE;
UNIVERSITEIT HASSELT, Hasselt, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/373 (2006.01); C30B 25/18 (2006.01); C30B 28/14 (2006.01); C30B 29/04 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3732 (2013.01); C30B 25/186 (2013.01); C30B 28/14 (2013.01); C30B 29/04 (2013.01); C30B 29/406 (2013.01); H01L 21/02115 (2013.01); H01L 21/02312 (2013.01); H01L 21/02389 (2013.01); H01L 21/02414 (2013.01); H01L 21/02491 (2013.01); H01L 23/3735 (2013.01); H01L 23/481 (2013.01);
Abstract
An intermediate structure for forming a semiconductor device and method of making is provided. The intermediate device includes (i) a substrate comprising a Ga-based layer, and (ii) optionally, a metal layer on the substrate; wherein at least one of the Ga-based layer and, if present, the metal layer comprises at least a surface region having an isoelectric point of less than 7, usually at most 6.