The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Jun. 12, 2020
Infineon Technologies Austria Ag, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A transistor device and a method for forming a transistor device are disclosed. The method includes: forming first regions of a first doping type and second regions of a second doping type in inner and edge regions of a semiconductor body; and forming body and source regions of transistor cells in the inner region. Forming the first and second regions includes: forming first and second implanted regions in the inner and edge regions, each first implanted region including at least dopant atoms of a first doping type and each second implanted region including at least dopant atoms of a second doping type; and diffusing the dopant atoms of both doping types in a thermal process such that dopant atoms of at least one of the first and second doping types have at least one of different diffusion rates and diffusion lengths in the inner and edge regions.