The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Sep. 13, 2018
Applicant:

University of Technology Sydney, Ultimo, AU;

Inventors:

Francesca Iacopi, Ultimo, AU;

Aiswarya Pradeepkumar, Ultimo, AU;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7602 (2013.01); H01L 21/02167 (2013.01); H01L 21/02529 (2013.01); H01L 21/2022 (2013.01); H01L 21/3213 (2013.01);
Abstract

An electrical isolation process, includes receiving a substrate including a layer of carbon-rich material on silicon, and selectively removing regions of the substrate to form mutually spaced islands of the carbon-rich material on the silicon. The layer of carbon-rich material on silicon includes the layer of carbon-rich material on an electrically conductive layer of silicon on an electrically insulating material. Selectively removing regions of the substrate includes removing the carbon-rich material and at least a portion of the electrically conductive layer of silicon from those regions to provide electrical isolation between the islands of carbon-rich material on silicon.


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