The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Nov. 17, 2020
Applicant:
Raytheon Company, Waltham, MA (US);
Inventor:
Jonathan Getty, Goleta, CA (US);
Assignee:
RAYTHEON COMPANY, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/32 (2006.01); H01L 21/3205 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32051 (2013.01); H01L 23/552 (2013.01);
Abstract
A method of fabricating an integrated circuit (IC) includes depositing a photoresist on a semiconductor substrate and patterning the photoresist to expose one or more deposition target areas. The method further includes performing a dual-deposition process that deposits a plurality of layers on the photoresists and on the target areas. A conductive layer among the plurality of conductive layers inhibits X-ray energy so as to prevent damage to the underlying semiconductor substrate.