The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Feb. 26, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Mel Stychen Sanchez Tan, Kawasaki Kanagawa, JP;

Aurelien Nam Phong Tran, Yokohama Kanagawa, JP;

Ryuji Nishikubo, Kawasaki Kanagawa, JP;

Norio Aoyama, Machida Tokyo, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 7/58 (2006.01); H04L 9/08 (2006.01);
U.S. Cl.
CPC ...
G06F 7/588 (2013.01); H04L 9/0869 (2013.01); H04L 2209/12 (2013.01);
Abstract

A memory system includes a nonvolatile memory and a controller that performs first, second, and third processes on memory cells of the nonvolatile memory. The first process is performed on first memory cells to store a first value therein, such that a highest threshold voltage among the threshold voltages of the first memory cells is set as a first threshold voltage. The second process is performed on second memory cells to store a second value therein, such that a lowest threshold voltage among the threshold voltages of the second memory cells is set as a second threshold voltage higher than the first threshold voltage. The third process performed on third memory cells such that a lowest threshold voltage in the third memory cells is lower than the first threshold voltage, and a highest threshold voltage in the third memory cells is higher than the second threshold voltage.


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