The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Sep. 30, 2019
Applicant:

Tcl Technology Group Corporation, Huizhou, CN;

Inventors:

Zhiwen Nie, Huizhou, CN;

Yixing Yang, Huizhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/02 (2006.01); C09K 11/08 (2006.01); C09K 11/70 (2006.01); C09K 11/88 (2006.01); H01L 51/50 (2006.01); C09K 11/65 (2006.01); C09K 11/59 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/025 (2013.01); C09K 11/0883 (2013.01); C09K 11/59 (2013.01); C09K 11/65 (2013.01); C09K 11/703 (2013.01); C09K 11/883 (2013.01); H01L 51/502 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01);
Abstract

The present application discloses a composite and its preparation method and application. The composite includes silica-coated quantum dots and graphene nanosheets on the surface of the silica-coated quantum dots; wherein the silica-coated quantum dots include quantum dots and silica layer coated on the surface of the quantum dots. And the graphene nanosheets and the silica layer is bonded by (O—)Si—R—NHCO—R—CONH—R—Si(O—)or (O—)Si—R—SCHCH—R—Si(O—), R, R, R, Rare respectively selected from a group consisting of a hydrocarbyl or a hydrocarbyl derivative, Ris selected from a hydrocarbyl, a hydrocarbyl derivative, an aryl or an aryl derivative. The composite can further improve the stability of quantum dots without affecting the inherent optical properties of quantum dots, thereby improving luminous efficiency.


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