The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jul. 16, 2020
Applicant:

National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);

Inventors:

William R. Wampler, Albuquerque, NM (US);

Barney L. Doyle, Albuquerque, NM (US);

Clark S. Snow, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 6/00 (2006.01); H05H 3/06 (2006.01); G21G 4/02 (2006.01);
U.S. Cl.
CPC ...
H05H 6/00 (2013.01); G21G 4/02 (2013.01); H05H 3/06 (2013.01);
Abstract

A novel thin-film target can the life of tritium targets for the production of 14 MeV neutrons by theH(H,n)He nuclear reaction while using only a small fraction of the amount of tritium compared to a standard thick-film target. With the thin-film target, the incident deuterium is implanted through the front tritide film into the underlying substrate material. A thin permeation barrier layer between the tritide film and substrate reduces the rate of tritium loss from the tritide film. As an example, good thin-film target performance was achieved using W and Fe for the barrier and substrate materials, respectively.


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