The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Sep. 04, 2019
Applicant:

Facebook Technologies, Llc, Menlo Park, CA (US);

Inventors:

William Padraic Henry, Cork, IE;

Allan Pourchet, Cork, IE;

Assignee:

FACEBOOK TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/24 (2010.01); G02B 27/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0093 (2020.05); H01L 27/153 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); G02B 27/0093 (2013.01);
Abstract

Disclosed herein are techniques relating to wafer-to-wafer bonding for manufacturing light-emitting diodes (LEDs). In some embodiments, a method includes reducing bowing of a layered structure including a semiconductor material and a substrate on which the semiconductor material is formed by generating breakages, fractures, or at least one region of weakened bonding within the layered structure. The method also includes bonding a base wafer to the semiconductor material, removing the substrate from the semiconductor material, and forming a plurality of trenches through the semiconductor material to produce a plurality of LEDs.


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