The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Oct. 15, 2019
Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Zhixuan Guo, Beijing, CN;
Fengguo Wang, Beijing, CN;
Yezhou Fang, Beijing, CN;
Xinguo Wu, Beijing, CN;
Hong Liu, Beijing, CN;
Kai Li, Beijing, CN;
Liang Tian, Beijing, CN;
Shiyu Zhang, Beijing, CN;
Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Abstract
A thin film transistor, a method for fabricating the same, an array substrate, a display panel, and a display device are provided. The thin film transistor includes a substrate, and an active layer on the substrate, wherein the active layer includes a poly-silicon layer and has a channel region and two electrode connection regions respectively on two sides of the channel region, and the channel region includes a plurality of lightly drain doping segments, which are spaced apart along from one of the electrode connection regions to the other electrode connection region, and channel segments located between the lightly drain doping segments.