The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Jul. 22, 2019
Ishan Wathuthanthri, Baltimore, MD (US);
Ken Alfred Nagamatsu, Ellicott City, MD (US);
William J. Sweet, Baltimore, MD (US);
James T. Kelliher, Elkridge, MD (US);
John S. Mason, Jr., Pasadena, MD (US);
Jonah Paul Sengupta, Baltimore, MD (US);
Ishan Wathuthanthri, Baltimore, MD (US);
Ken Alfred Nagamatsu, Ellicott City, MD (US);
William J. Sweet, Baltimore, MD (US);
James T. Kelliher, Elkridge, MD (US);
John S. Mason, Jr., Pasadena, MD (US);
Jonah Paul Sengupta, Baltimore, MD (US);
NORTHROP GRUMMAN SYSTEMS CORPORATION, Falls Church, VA (US);
Abstract
A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.