The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Dec. 20, 2018
Applicant:

Nuvoton Technology Corporation, Hsinchu Science Park, TW;

Inventors:

Vivek Ningaraju, mysore, IN;

Po-An Chen, Toufen, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/778 (2006.01); H01L 29/43 (2006.01); H01L 27/092 (2006.01); H01L 29/861 (2006.01); H01L 21/8238 (2006.01); H01L 21/8252 (2006.01); H01L 27/098 (2006.01); H01L 29/20 (2006.01); H01L 29/788 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/8252 (2013.01); H01L 21/823857 (2013.01); H01L 27/098 (2013.01); H01L 27/0922 (2013.01); H01L 29/1066 (2013.01); H01L 29/432 (2013.01); H01L 29/7781 (2013.01); H01L 29/861 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/788 (2013.01); H01L 29/808 (2013.01);
Abstract

A semiconductor device and a semiconductor structure are disclosed. The semiconductor device includes a substrate, a first III-V compound layer, a second III-V compound layer, a source, a drain and a gate stack structure. The first III-V compound layer is disposed on the substrate. The second III-V compound layer is disposed on the first III-V compound layer. The source and the drain are disposed on opposite sidewall boundaries of the second III-V compound layer. The gate stack structure is disposed on the second III-V compound layer. The gate stack structure includes a first gate and a second gate. The first gate is disposed on the second III-V compound layer. The second gate is disposed on and electrically isolated from the first gate. The second gate is electrically coupled to the source.


Find Patent Forward Citations

Ningaraju, Vivek. (2022). Iii-v field effect transistor and semiconductor structure (U.S. Patent No. 11342439). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11342439

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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