The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Sep. 23, 2020
Infineon Technologies Austria Ag, Villach, AT;
Ling Ma, Redondo Beach, CA (US);
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes: a semiconductor substrate; a plurality of needle-shaped field plate trenches and a plurality of needle-shaped gate trenches formed in the semiconductor substrate and interspersed with one another; a first dielectric layer above the semiconductor substrate; a gate interconnect structure including electrically conductive lines separated from the semiconductor substrate by the first dielectric layer and first conductive vias extending through the first dielectric layer to connect the electrically conductive lines to gate electrodes in the needle-shaped gate trenches; and a field plate interconnect structure electrically isolated from the gate interconnect structure and including second conductive vias that extend through the first dielectric layer and connect to field plates in the needle-shaped field plate trenches.