The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Apr. 13, 2020
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Zia Hossain, Tempe, AZ (US);

Joseph Andrew Yedinak, Mountain Top, PA (US);

Sauvik Chowdhury, Phoenix, AZ (US);

Muh-Ling Ger, Chandler, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 29/0657 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract

An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.


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