The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Nov. 12, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Young-gu Jin, Suwon-si, KR;

Young-chan Kim, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01S 17/08 (2006.01); G01S 7/481 (2006.01); G11C 11/56 (2006.01); G01S 7/4914 (2020.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); G01S 7/4816 (2013.01); G01S 17/08 (2013.01); G11C 11/5607 (2013.01); H01L 27/1461 (2013.01); G01S 7/4914 (2013.01); H01L 27/14645 (2013.01);
Abstract

An image sensor includes a semiconductor substrate including a first surface and a second surface and further includes a well region and a first floating diffusion region that are each adjacent to the first surface. The image sensor includes a first vertical transmission gate and a second vertical transmission gate isolated from direct contact with each other and each extend from the first surface of the semiconductor substrate and in a thickness direction of the semiconductor substrate through at least a portion of the well region. The image sensor includes a first storage gate between the first vertical transmission gate and the first floating diffusion region and on the first surface of the semiconductor substrate. The image sensor includes a first tap transmission gate between the first storage gate and the first floating diffusion region and on the first surface of the semiconductor substrate.


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