The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Mar. 23, 2018
Nanjing University, Jiangsu, CN;
Feng Yan, Jiangsu, CN;
Zhijian Huang, Jiangsu, CN;
Yi Shi, Jiangsu, CN;
Haowen Ma, Jiangsu, CN;
Yuqian Li, Jiangsu, CN;
Xiaofeng Bu, Jiangsu, CN;
Xiangshun Kong, Jiangsu, CN;
Cheng Mao, Jiangsu, CN;
Cheng Yang, Jiangsu, CN;
Limin Zhang, Jiangsu, CN;
NANJING UNIVERSITY, Jiangsu, CN;
Abstract
A photosensitive detector includes an array of detection units, each detection unit having a light-sensing transistor (), a charge storage transistor () and a reading transistor (), or comprising a light-sensing transistor, a charge transfer transistor (), a charge storage transistor and a reading transistor. The light-sensing transistor is configured to realize the light-sensing function of the photosensitive detector; the charge storage transistor is configured to store photogenerated charges; the reading transistor is configured to read a signal; and, the charge transfer transistor is configured to control the transfer of the photogenerated charges. The photosensitive detector can realize global shutter and fast reading, and is compatible with the existing floating gate CMOS process, and the failure of any pixel will not affect the normal operation of the whole imaging array.