The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Jul. 10, 2020
Tianma Japan, Ltd., Kanagawa, JP;
Jun Tanaka, Kanagawa, JP;
Kazushige Takechi, Kanagawa, JP;
TIANMA JAPAN. LTD., Kanagawa, JP;
Wuhan Tianma Micro-Electronics Co., Ltd., Wuhan, CN;
Abstract
A thin-film transistor substrate includes an insulating substrate, a first insulating layer, a first thin-film transistor including a first oxide semiconductor film, a second insulating layer located upper than the first insulating layer, and a second thin-film transistor including a second oxide semiconductor film different in composition from the first oxide semiconductor film. At least a part of the first oxide semiconductor film is provided above and in contact with the first insulating layer. The first insulating layer is the uppermost insulating layer among insulating layers located lower than and in contact with the first oxide semiconductor film. At least a part of the second oxide semiconductor film is provided above and in contact with the second insulating layer. The second insulating layer is the uppermost insulating layer among insulating layers located lower than and in contact with the second oxide semiconductor film.