The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Feb. 01, 2020
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Sung Lae Oh, Cheongju-si, KR;

Jin Ho Kim, Hwaseongsi, KR;

Sang Woo Park, Icheon-si, KR;

Sang Hyun Sung, Cheongju-si, KR;

Soo Nam Jung, Seoul, KR;

Chang Woon Choi, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 27/11556 (2017.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H01L 27/11526 (2017.01); H01L 25/18 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02636 (2013.01); H01L 21/0337 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 23/528 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 25/18 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 29/66545 (2013.01); H01L 24/89 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/80001 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A semiconductor memory device includes an electrode structure including a plurality of electrode layers and a plurality of interlayer dielectric layers which are alternately stacked on a substrate defined with a plurality of cell areas and a plurality of coupling areas in a first direction; a hard mask pattern disposed on the electrode structure, and having a plurality of opening holes in the coupling areas; and a plurality of contact holes defined in the electrode structure under the plurality of opening holes, and exposing pad areas of the electrode layers, respectively. The plurality of opening holes are disposed by being distributed in a plurality of rows arranged in a second direction intersecting with the first direction.


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