The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jun. 03, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Keun Nam Kim, Yongin-si, KR;

Jin-Hwan Chun, Seongnam-si, KR;

Yoo Sang Hwang, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 21/7682 (2013.01); H01L 23/53295 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 27/10823 (2013.01);
Abstract

A semiconductor device is provided including a substrate including a trench. A first conductive pattern is disposed within the trench. The first conductive pattern has a width smaller than a width of the trench. A first spacer extends along at least a portion of a side surface of the first conductive pattern and the trench. A second spacer at least partially fills the trench adjacent to the first spacer. An air spacer is provided including a first portion between the first spacer and the second spacer, and a second portion disposed on the second spacer and the first portion. A width of the second portion of the air spacer is greater than a width of the first portion of the air spacer.


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