The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Oct. 05, 2020
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Jae Taek Kim, Icheon-si, KR;
Hye Yeong Jung, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/535 (2006.01); H01L 49/02 (2006.01); H01L 27/11556 (2017.01); H01L 21/768 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 27/249 (2013.01); H01L 27/2454 (2013.01); H01L 28/24 (2013.01); H01L 45/06 (2013.01);
Abstract
The present disclosure includes a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes an insulating film passing through a dummy source structure, a first dummy stack extending to overlap the insulating film and the dummy source structure, and including a depression overlapping the insulating film, a resistive film overlapping the depression of the first dummy stack, and a second dummy stack disposed on the first dummy stack to cover the resistive film.