The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jul. 12, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Hiroyuki Okazaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/36 (2006.01); H01L 23/48 (2006.01); H01L 23/29 (2006.01); H01L 23/60 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 23/29 (2013.01); H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H01L 23/36 (2013.01); H01L 23/367 (2013.01); H01L 23/373 (2013.01); H01L 23/3733 (2013.01); H01L 23/3735 (2013.01); H01L 23/48 (2013.01); H01L 23/60 (2013.01); H01L 24/10 (2013.01); H01L 24/16 (2013.01);
Abstract

A transistor chip () has an active region (). A first seal material () covers a central portion of the active region () and does not cover a peripheral portion of the active region (). A second seal material () covers the peripheral portion of the active region (). Thermal conductivity of the first seal material () is higher than thermal conductivity of the second seal material (). Permittivity of the second seal material () is lower than permittivity of the first seal material ().


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