The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Jan. 13, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jaewon Hwang, Seongnam-si, KR;
Jinnam Kim, Anyang-si, KR;
Kwangjin Moon, Hwaseong-si, KR;
Kunsang Park, Hwaseong-si, KR;
Myungjoo Park, Pohang-sl, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
Abstract
Aspects of the present disclosure are related to a semiconductor device that includes a crystalline substrate having a first surface and a second surface vertically opposite each other and an insulating layer disposed on the first surface of the crystalline substrate. The device may also include an etch stop layer interposed between and contacting the crystalline substrate and the insulating layer and a conductive through via structure penetrating the crystalline substrate and the insulating layer. The device may also include an insulating separation layer disposed horizontally adjacent to the conductive through via structure, and having an inner wall and an outer wall. The insulating separation layer may include a first portion disposed between the conductive through via structure and the crystalline substrate, and a second portion disposed between the conductive through via structure and the etch stop layer.