The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jan. 06, 2021
Applicant:

Shanghai Huali Microelectronics Corporation, Shanghai, CN;

Inventors:

Zhengying Wei, Shanghai, CN;

Xuedong Fan, Shanghai, CN;

Zhiyong Wu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/76802 (2013.01);
Abstract

The present disclosure provides a method for improving HDP filling defects through an STI etching process, comprises a wafer uniformly distributed with pixel areas and logical areas, and dividing the wafer into quadrants 1 to 4; placing the second quadrants in an etching chamber in a manner of facing to a cantilever of an etching machine; etching the wafer to form STI areas with the same depth in the pixel areas and the logical areas of the quadrants 1 to 4; removing the wafer from the etching machine and covering the STI areas of the pixel areas with a photoresist; placing the wafer on an electrostatic chuck of the etching chamber again, and enabling any quadrant except the second quadrant to face to the cantilever; continuously etching the STI areas of the logical areas of the quadrants 1 to 4 to form deep STI areas.


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