The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Nov. 09, 2017
Applicant:
Hkc Corporation Limited, Guangdong, CN;
Inventor:
Jianfeng Shan, Chongqing, CN;
Assignee:
HKC CORPORATION LIMITED, Guangdong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02513 (2013.01); H01L 21/02502 (2013.01); H01L 21/02532 (2013.01); H01L 21/02675 (2013.01); H01L 29/66757 (2013.01);
Abstract
A method of manufacturing a low temperature polysilicon thin film, including: forming a buffer layer on a substrate; forming a silicon layer on the buffer layer; providing a mask; patterning the silicon layer through the mask, wherein the patterned silicon layer includes a plurality of recrystallization growth spaces; and annealing the silicon layer to form a polysilicon layer, and a partial silicon material of the polysilicon layer is formed on the recrystallization growth space.