The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jan. 06, 2020
Applicant:

Reno Technologies, Inc., Wilmington, DE (US);

Inventor:

Michael Gilliam Ulrich, Delran, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H03H 7/40 (2006.01); H01L 21/67 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); C23C 16/505 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); C23C 16/505 (2013.01); H01L 21/02274 (2013.01); H01L 21/28556 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01L 21/67069 (2013.01); H03H 7/40 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract

In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes an electronically variable capacitor (EVC) comprising discrete capacitors, each discrete capacitor having a corresponding switching circuit for switching in and out the discrete capacitor to alter a total capacitance of the EVC. Each switching circuit comprises at least one switching field-effect transistor (FET) operably coupled to the corresponding discrete capacitor to cause the switching in and out of the discrete capacitor. For each switching circuit, when the switching circuit is switched OFF to switch out the corresponding discrete capacitor, the at least one switching FET receives a bias voltage from a bias voltage source to reduce a capacitance variability of the at least one switching FET.


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